FDMS3604S PowerTrench® Power Stage FDMS3604S PowerTrench® Power Stage January 2015 Asymmetric Dual N-Channel MOSFET Features Q1: N-Channel „ Max rDS(on) = 8 mΩ at VGS = 10 V, ID = 13 A „ Max rDS(on) = 11 mΩ at VGS = 4.
5 V, ID = 11 A Q2: N-Channel „ Max rDS(on) = 2.
8 mΩ at VGS = 10 V, ID = 23 A „ Max rDS(on) = 3.
5 mΩ at VGS = 4.
5 V, ID = 21 A „ Low inductance packaging shortens rise/fall times, resulting in lower switching losses „ MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing „ RoHS Compliant General Description This device includes two specialized N-Channel MOSFETs in a dual PQFN package.
The switch node has been internally connec...

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