June 2002
AO4413 P-Channel Enhancement Mode Field Effect
Transistor
General Description
The AO4413 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating.
This device is suitable for use as a load switch or in PWM applications.
Features
VDS (V) = -30V ID = -15A RDS(ON) 7mΩ (VGS = -20V) RDS(ON) 8.
5mΩ (VGS = -10V)
SOIC-8 Top View
SD SD SD GD
D
G S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TA=25°C
Current A
TA=70°C
Pulsed Drain Current B
ID IDM
TA=25°C Power Dissipation A TA=70°C
PD
Junction and Storage Temperature ...