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AO4402

Alpha & Omega Semiconductors
Part Number AO4402
Manufacturer Alpha & Omega Semiconductors
Description N-Channel MOSFET
Published Dec 1, 2008
Detailed Description March 2002 AO4402 N-Channel Enhancement Mode Field Effect Transistor General Description www.DataSheet4U.com provide F...
Datasheet PDF File AO4402 PDF File

AO4402
AO4402


Overview
March 2002 AO4402 N-Channel Enhancement Mode Field Effect Transistor General Description www.
DataSheet4U.
com provide Features VDS (V) = 30V ID = 12A RDS(ON) < 14mΩ (VGS = 10V) RDS(ON) < 16mΩ (VGS = 4.
5V) RDS(ON) < 22mΩ (VGS = 2.
5V) The AO4402 uses advanced trench technology to excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.
5V.
This device is suitable for use as a load switch or in PWM applications.
D S S S G D D D D G S SOIC-8 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation B Maximum 30 ±12 12 10 80 3 2.
1 -55 to 150 Units V V A TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD TJ, TSTG W °C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 23 48 12 Max 40 65 16 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd.
AO4402 Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter Conditions ID=250µA, VGS=0V VDS=24V, VGS=0V TJ=55°C VDS=0V, VGS= ±12V VDS=VGS ID=250µA VGS=4.
5V, VDS=5V VGS=10V, ID=12A Static Drain-Source On-Resistance TJ=125°C VGS=4.
5V, ID=10A VGS=2.
5V, ID=8A gFS VSD IS Forward Transconductance VDS=5V, ID=5A 25 IS=10A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current 0.
6 60 11.
1 16 13.
1 21 50 0.
8 1 4.
5 1630 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 201 142 0.
8 19 VGS=4.
5V, VDS=15V, ID=12A 3.
3 5.
2 3 VGS=10V, VDS=15V, RL=1.
2Ω, RGEN=3Ω IF=10A, dI/dt=100A/µs 4.
7 33.
5 6 21 11 14 19.
2 16 26 0.
8 Min 30 1 5 100 1.
2 Typ Max Units V µA nA V A mΩ mΩ mΩ S V A pF pF pF Ω nC nC nC ns ns ns ns ns nC STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) www.
DataSheet4U.
com Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On sta...


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