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AO4402G

Alpha & Omega Semiconductors
Part Number AO4402G
Manufacturer Alpha & Omega Semiconductors
Description 20V N-Channel MOSFET
Published Nov 8, 2023
Detailed Description AO4402G 20V N-Channel MOSFET General Description • Trench Power MOSFET technology • Low RDS(ON) • RoHS and Halogen-Free...
Datasheet PDF File AO4402G PDF File

AO4402G
AO4402G

Overview
AO4402G 20V N-Channel MOSFET General Description • Trench Power MOSFET technology • Low RDS(ON) • RoHS and Halogen-Free Compliant Product Summary VDS ID (at VGS=4.
5V) RDS(ON) (at VGS=4.
5V) RDS(ON) (at VGS=2.
5V) 20V 20A < 5.
9mΩ < 7.
3mΩ Applications • DC/DC Converters in Computing, Servers, and POL • Battery protection switch 100% UIS Tested 100% Rg Tested SOIC-8 Top View D D D D Bottom View G S S S Pin 1 Top View S1 S2 S3 G4 8D 7D 6D 5D Orderable Part Number AO4402G Package Type SO-8 Form Tape & Reel D G S Minimum Order Quantity 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TA=25°C TA=70°C ID Pulsed Drain Current C IDM Avalanche Current C IAS Avalanche energy L=0.
1mH C EAS TA=25°C Power Dissipation B TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Maximum 20 ±12 20 15 80 40 80 3.
1 2.
0 -55 to 150 Units V V A A mJ W °C Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RqJA 31 59 Maximum Junction-to-Lead Steady-State RqJL 16 Max 40 75 24 Units °C/W °C/W °C/W Rev.
1.
0: August 2017 www.
aosmd.
com Page 1 of 5 AO4402G Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current ID=250μA, VGS=0V VDS=20V, VGS=0V IGSS VGS(th) RDS(ON) gFS VSD IS Gate-Body leakage current VDS=0V, VGS=±12V Gate Threshold Voltage VDS=VGS, ID=250mA VGS=4.
5V, ID=20A Static Drain-Source On-Resistance VGS=2.
5V, ID=18A Forward Transconductance VDS=5V, ID=20A Diode Forward Voltage IS=1A, VGS=0V Maximum Body-Diode Continuous Current TJ=55°C TJ=125°C DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=10V, f=1MHz f=1MHz SWITCHING PA...


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