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AO4401

Alpha & Omega Semiconductors
Part Number AO4401
Manufacturer Alpha & Omega Semiconductors
Description P-Channel MOSFET
Published Dec 1, 2013
Detailed Description July 2001 AO4401 P-Channel Enhancement Mode Field Effect Transistor General Description The AO4401 uses advanced trench...
Datasheet PDF File AO4401 PDF File

AO4401
AO4401

Overview
July 2001 AO4401 P-Channel Enhancement Mode Field Effect Transistor General Description The AO4401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.
5V.
This device is suitable for use as a load switch or in PWM applications.
Features VDS (V) = -30V ID = -6.
1 A RDS(ON) < 46mΩ (VGS = -10V) RDS(ON) < 61mΩ (VGS = -4.
5V) RDS(ON) < 117mΩ (VGS = -2.
5V) SOIC-8 Top View S S S G D D D D D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A B Maximum -30 ±12 -6.
1 -5.
1 -60 3 2.
1 -55 to 150 Units V V A VGS TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD TJ, TSTG W °C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 31 59 16 Max 40 75 24 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd.
AO4401 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance Conditions ID=-250µA, VGS=0V VDS=-24V, VGS=0V TJ=55°C VDS=0V, VGS=±12V VDS=VGS ID=-250µA VGS=-4.
5V, VDS=-5V VGS=-10V, ID=-6.
1A TJ=125°C 49 76 11 -0.
75 -0.
7 -1 38 Min -30 -1 -5 ±100 -1.
3 46 70 61 117 -1 -4.
2 Typ Max Units V µA nA V A mΩ mΩ mΩ S V A pF pF pF Ω nC nC nC ns ns ns ns ns nC VGS=-4.
5V, ID=-5A VGS=-2.
5V, ID=-1A VDS=-5V, ID=-5A Forward Transconductance IS=-1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current 7 DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Reverse Transfer Capacitance Crss Gate resistance Rg SWITCHING PARAMETERS Qg Total Gate Charge...


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