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AO4404

Freescale
Part Number AO4404
Manufacturer Freescale
Description N-Channel MOSFET
Published Dec 1, 2013
Detailed Description AO4404 N-Channel Enhancement Mode Field Effect Transistor General Description The AO4404 uses advanced trench technolog...
Datasheet PDF File AO4404 PDF File

AO4404
AO4404

Overview
AO4404 N-Channel Enhancement Mode Field Effect Transistor General Description The AO4404 uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation with gate voltages as low as 2.
5V.
This device is suitable for use as a load switch or in PWM applications.
The source leads are separated to allow a Kelvin connection to the source, which may be used to bypass the source inductance.
Features VDS (V) = 30V ID = 8.
5A RDS(ON) < 24mΩ (VGS = 10V) RDS(ON) < 30mΩ (VGS = 4.
5V) RDS(ON) < 48mΩ (VGS = 2.
5V) D S S S G D D D D G S SOIC-8 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Maximum VDS 30 Drain-Source Voltage VGS ±12 Gate-Source Voltage Continuous Drain TA=25°C 8.
5 A Current TA=70°C ID 7.
1 Pulsed Drain Current B TA=25°C TA=70°C Power Dissipation Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Lead C IDM PD TJ, TSTG 60 3 2.
1 -55 to 150 Units V V A W °C Symbol A A t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 31 59 16 Max 40 75 24 Units °C/W °C/W °C/W 1/6 www.
freescale.
net.
cn Free Datasheet http://www.
datasheet4u.
com/ AO4404 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance Conditions ID=250µA, VGS=0V VDS=24V, VGS=0V TJ=55°C VDS=0V, VGS= ±12V VDS=VGS ID=250µA VGS=4.
5V, VDS=5V VGS=10V, ID=8.
5A TJ=125°C 0.
7 40 1 20.
5 30 25 40 16 0.
71 Min 30 1 5 100 1.
4 24 36 30 48 1 4.
3 Typ Max Units V µA nA V A mΩ mΩ mΩ S V A pF pF pF Ω nC nC nC ns ns ns ns ns nC VGS=4.
5V, ID=8.
5A VGS=2.
5V, ID=5A Forward Transconductance VDS=5V, ID=5A Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current 10 DYNAMIC PARAMETERS Ciss Input Capacitance Cos...


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