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AO4403

Freescale
Part Number AO4403
Manufacturer Freescale
Description P-Channel MOSFET
Published Dec 1, 2013
Detailed Description Freescale P-Channel 20-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process t...
Datasheet PDF File AO4403 PDF File

AO4403
AO4403


Overview
Freescale P-Channel 20-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation.
Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.
AO4403/ MC4403 PRODUCT SUMMARY VDS (V) rDS(on) m(Ω) 60 @ VGS = -4.
5V -20 80 @ VGS = -2.
5V 150 @ VGS = -1.
8V ID (A) -8.
3 -6.
7 -4.
5 • • • • Low rDS(on) provides higher efficiency and extends battery life Low thermal impedance copper leadframe SOIC-8 saves board space Fast switching speed High performance trench technology 1 2 3 4 8 7 6 5 ABSOLUTE MAXIMUM RATINGS (TA = 25 C UNLESS OTHERWISE NOTED) Parameter Symbol Maximum Units Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS ±12 Continuous Drain Current Pulsed Drain Current b a a o TA=25 C TA=70 C o o ID IDM IS -8.
3 -6.
7 ±50 -2.
1 3.
1 2.
0 A W o A Continuous Source Current (Diode Conduction) Power Dissipation a TA=25 C TA=70 C o o PD Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta t <= 10 sec Steady-State Symbol RθJA Maximum 40 70 Units o o C/W C/W Notes a.
Surface Mounted on 1” x 1” FR4 Board.
b.
Pulse width limited by maximum junction temperature www.
freescale.
net.
cn 1 Free Datasheet http://www.
datasheet4u.
com/ Freescale AO4403/ MC4403 SPECIFICATIONS (TA = 25 C UNLESS OTHERWISE NOTED) Parameter Static Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current A o Symbol VGS(th) IGSS IDSS ID(on) A Te st Conditions VDS = VGS, ID = -250 uA VDS = 0 V, VGS = ±12 V Min -0.
7 Limits Unit Typ Max ±100 nA uA A VDS = -16 V, VGS = 0 V VDS = -16 V, VGS = 0 V, T J = 55oC -1 -5 -50 60 80 150 70 -0.
6 16.
7 1.
8 1.
9 20 23 289 134 Drain-Source On-Resistance Forward Tranconductance Diode Forward Vo...


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