Jan 2003
AO4422 N-Channel Enhancement Mode Field Effect
Transistor
General Description
The AO4422 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.
This device is suitable for use as a load switch or in PWM applications.
The source leads are separated to allow a Kelvin connection to the source, which may be used to bypass the source inductance.
Features
VDS (V) = 30V ID = 11A RDS(ON) 15mΩ (VGS = 10V) RDS(ON) 24mΩ (VGS = 4.
5V)
SD SD SD GD
SOIC-8
D
G S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TA=25°C
Current A
TA=70°C
Pulsed Drain Current B
ID I...