WNM2024
Single N-Channel, 20V, 3.
9A, Power MOSFET
VDS (V) 20
Rds(on) (Ω) 0.
027@ VGS=4.
5V 0.
031@ VGS=2.
5V 0.
036@ VGS=1.
8V
Descriptions
The WNM2024 is N-Channel enhancement MOS Field Effect
Transistor.
Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge.
This device is suitable for use in DC-DC conversion, power switch and charging circuit.
Standard Product WNM2024 is Pb-free.
Features
z Trench Technology z Supper high density cell design z Excellent ON resistance for higher DC current z Extremely Low Threshold Voltage z Small package SOT-23
Applications
WNM2024
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willsemi.
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SOT-23
D 3
12 GS
Pin configuration (Top view)
3
W24*
12
W24=...