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WNM2021

Will Semiconductor
Part Number WNM2021
Manufacturer Will Semiconductor
Description N-Channel MOSFET
Published Jun 26, 2014
Detailed Description WNM2021 WNM2021 N-Channel, 20V, 0.89A, Small Signal MOSFET VDS (V) 20 Rds(on) (Ω) 0.220@ VGS=4.5V 0.260@ VGS=2.5V 0.320@...
Datasheet PDF File WNM2021 PDF File

WNM2021
WNM2021

Overview
WNM2021 WNM2021 N-Channel, 20V, 0.
89A, Small Signal MOSFET VDS (V) 20 Rds(on) (Ω) 0.
220@ VGS=4.
5V 0.
260@ VGS=2.
5V 0.
320@ VGS=1.
8V ID (A) 0.
55 0.
45 0.
35 SOT-323 Http//:www.
willsemi.
com Descriptions The WNM2021 is N-Channel enhancement MOS Field Effect Transistor.
Uses advanced trench (ON) D 3 technology and design to provide excellent RDS with low gate charge.
This device is suitable for use in DC-DC conversion, load switch and level shift.
Standard Product WNM2021 is Pb-free.
1 G 2 S Pin configuration (Top view) Features z z z z z Trench Technology Supper high density cell design Excellent ON resistance Extremely Low Threshold Voltage Small package SOT-323 * 1 3 21* 2 21 = Device Code = Month (A~Z) Marking Applications Device Order information Package SOT-323 Shipping 3000/Reel&Tape z z z z z DC-DC converter circuit Small Signal Switch Load Switch Level Shift WNM2021-3/TR Will Semiconductor Ltd.
1 Dec, 2010 - Rev.
1.
0 WNM2021 Absolute Maximum ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current a Maximum Power Dissipation a Continuous Drain Current b Maximum Power Dissipation b Pulsed Drain Current c Operating Junction Temperature Lead Temperature Storage Temperature Range TA=25°C TA=70°C TA=25°C TA=70°C TA=25°C TA=70°C TA=25°C TA=70°C Symbol VDS VGS ID PD ID PD IDM TJ TL Tstg 0.
89 0.
71 0.
37 0.
23 0.
78 0.
62 0.
29 0.
18 1.
4 150 260 -55 to 150 10 S Steady State 20 ±6 0.
82 0.
65 0.
31 0.
20 0.
70 0.
56 0.
23 0.
14 Unit V A W A W A °C °C °C Thermal resistance ratings Parameter Junction-to-Ambient Thermal Resistance a Junction-to-Ambient Thermal Resistance b Junction-to-Case Thermal Resistance t ≤ 10 s Steady State t ≤ 10 s Steady State Steady State Symbol RθJA RθJA RθJC Typical 275 325 375 445 260 Maximum 335 395 430 535 300 Unit °C/W a b c d Surface mounted on FR4 Board using 1 square inch pad size, 1oz copper Surface mounted on FR4 board using minimum pad size, 1oz copper Repetitive rating, pulse width limited by junction ...


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