DatasheetsPDF.com

WNM2023

TY Semiconductor
Part Number WNM2023
Manufacturer TY Semiconductor
Description N-Channel MOSFET
Published Jun 26, 2014
Detailed Description Product specification WNM2023 Single N-Channel, 20V, 3.2A, Power MOSFET VDS (V) 20 Rds(on) (Ω) 0.038@ VGS=4.5V 0.044@ V...
Datasheet PDF File WNM2023 PDF File

WNM2023
WNM2023

Overview
Product specification WNM2023 Single N-Channel, 20V, 3.
2A, Power MOSFET VDS (V) 20 Rds(on) (Ω) 0.
038@ VGS=4.
5V 0.
044@ VGS=2.
5V 0.
052@ VGS=1.
8V SOT-23-3L Descriptions D The WNM2023 is N-Channel enhancement MOS Field Effect Transistor.
Uses advanced trench (ON) 3 technology and design to provide excellent RDS with low gate charge.
This device is suitable for use in DC-DC conversion, power switch and charging circuit.
Standard Product WNM2023 is Pb-free.
1 G 2 S Pin configuration (Top view) Features z z z z z Trench Technology Supper high density cell design 1 3 W04* 2 Excellent ON resistance for higher DC current Extremely Low Threshold Voltage Small package SOT-23-3L Marking W04 = Device Code * = Month (A~Z) Applications z z z z z Driver for Relay, Solenoid, Motor, LED etc.
DC-DC converter circuit Power Switch Load Switch Charging Device Order information Package SOT-23-3L Shipping 3000/Reel&Tape WNM2023-3/TR http://www.
twtysemi.
com sales@twtysemi.
com 1 of 3 Product sp...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)