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WNM2016

Will Semiconductor
Part Number WNM2016
Manufacturer Will Semiconductor
Description N-Channel MOSFET
Published Apr 29, 2017
Detailed Description WNM2016 N-Channel, 20V, 3.2A, Power MOSFET WNM2016 Http://www.willsemi.com V(BR)DSS 20 Rds(on) 40 @ 4.5V 47 @ 2.5V 55...
Datasheet PDF File WNM2016 PDF File

WNM2016
WNM2016

Overview
WNM2016 N-Channel, 20V, 3.
2A, Power MOSFET WNM2016 Http://www.
willsemi.
com V(BR)DSS 20 Rds(on) 40 @ 4.
5V 47 @ 2.
5V 55 @ 1.
8V Descriptions The WNM2016 is N-Channel enhancement MOS Field Effect Transistor.
Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge.
This device is suitable for use in DC-DC conversion and power switch applications.
Standard Product WNM2016 is Pb-free.
Features z Trench Technology z Supper high density cell design z Excellent ON resistance for higher DC current z Extremely Low Threshold Voltage z Small package SOT-23 SOT-23 D 3 12 GS Configuration (Top View) 3 WT6* 12 WT6 * = Device Code = Month (A~Z) Marking Applications z Driver for Relay, Solenoid, Motor, LED etc.
z DC-DC converter circuit z Power Switch z Load Switch Order Information Device Package WNM2016-3/TR SOT-23 Shipping 3000/Tape&Reel Will Semiconductor Ltd.
1 Oct, 2014 - Rev.
1.
3 WNM2016 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise...


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