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WNM2016

TY Semiconductor
Part Number WNM2016
Manufacturer TY Semiconductor
Description N-Channel Power MOSFET
Published Jun 26, 2014
Detailed Description Product specification WNM2016 N-Channel, 20V, 3.2A, Power MOSFET V(BR)DSS Rds(on) 40 @ 4.5V 20 47 @ 2.5V 55 @ 1.8V ...
Datasheet PDF File WNM2016 PDF File

WNM2016
WNM2016

Overview
Product specification WNM2016 N-Channel, 20V, 3.
2A, Power MOSFET V(BR)DSS Rds(on) 40 @ 4.
5V 20 47 @ 2.
5V 55 @ 1.
8V SOT-23 Descriptions The WNM2016 is N-Channel enhancement MOS Field Effect Transistor.
Uses advanced trench technology and design to provide excellent RDS (ON) D 3 with low gate 1 G 2 S charge.
This device is suitable for use in DC-DC conversion and power switch applications.
Standard Product WNM2016 is Pb-free.
Configuration (Top View) Features 3 z z z z z Trench Technology Supper high density cell design Excellent ON resistance for higher DC current Extremely Low Threshold Voltage Small package SOT-23 1 WT6 * 2 = Device Code = Month (A~Z) Marking WT6* Applications z z z z Driver for Relay, Solenoid, Motor, LED etc.
DC-DC converter circuit Power Switch Load Switch Device Order Information Package SOT-23 Shipping 3000/Tape&Reel WNM2016-3/TR http://www.
twtysemi.
com sales@twtysemi.
com 1 of 3 Product specification WNM2016 ABSOLUTE MAXIMUM RATINGS TA = 25 °C,...


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