WNM2030
WNM2030
Single N-Channel, 20V, 0.
95A, Power MOSFET
Http://www.
sh-willsemi.
com
VDS (V) 20
Rds(on) (ȍ) 0.
210@ VGS=4.
5V 0.
250@ VGS=2.
5V 0.
305@ VGS=1.
8V ESD Protected
Descriptions
The WNM2030 is N-Channel enhancement MOS Field Effect
Transistor.
Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge.
This device is suitable for use in DC-DC conversion, power switch and charging circuit.
Standard Product WNM2030 is Pb-free.
SOT-723
D 3
12 GS
Pin configuration (Top view)
Features
z Trench Technology z Supper high density cell design z Excellent ON resistance for higher DC current z Extremely Low Threshold Voltage z Small package SOT-723
Appli...