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BUZ10L

Part Number BUZ10L
Manufacturer Siemens Semiconductor Group
Description Power Transistor
Published Mar 23, 2005
Detailed Description BUZ 10 L Not for new design SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level P...
Datasheet BUZ10L




Overview
BUZ 10 L Not for new design SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level Pin 1 G Type BUZ 10 L Pin 2 D Pin 3 S VDS 50 V ID 23 A RDS(on) 0.
07 Ω Package TO-220 AB Ordering Code C67078-S1329-A2 Maximum Ratings Parameter Continuous drain current Symbol Values 23 Unit A ID IDpuls 92 TC = 26 °C Pulsed drain current TC = 25 °C Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse IAR EAR EAS 23 1.
3 mJ ID = 23 A, VDD = 25 V, RGS = 25 Ω L = 15.
1 µH, Tj = 25 °C Gate source voltage Gate-source peak voltage,aperiodic Power dissipation 8 VGS Vgs Ptot ± 14 ± 20 V W TC = 25 °C Operating te...






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