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BUZ100S

Siemens Semiconductor Group
Part Number BUZ100S
Manufacturer Siemens Semiconductor Group
Description Power Transistor
Published Mar 23, 2005
Detailed Description BUZ 100 S SPP77N05 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv /dt rated • 175°C o...
Datasheet PDF File BUZ100S PDF File

BUZ100S
BUZ100S

Overview
BUZ 100 S SPP77N05 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv /dt rated • 175°C operating temperature • also in SMD available Pin 1 Pin 2 Pin 3 G D S Type VDS 55 V ID 77 A RDS(on) 0.
015 Ω Package Ordering Code BUZ 100 S TO-220 AB Q67040-S4001-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current TC = 25 °C TC = 100 °C ID A 77 55 Pulsed drain current TC = 25 °C IDpuls 308 E AS Avalanche energy, single pulse ID = 77 A, V DD = 25 V, RGS = 25 Ω L = 128 µH, Tj = 25 °C mJ 380 IAR E AR Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Reverse diode dv/dt IS = 77 A, VDS = 40 V, diF/dt = 200 A/µs Tjmax = 175 °C 77 17 A mJ kV/µs dv/dt 6 V GS P tot Gate source voltage Power dissipation TC = 25 °C ± 20 170 V W Semiconductor Group 1 30/Jan/1998 BUZ 100 S SPP77N05 Maximum Ratings Parameter Symbol Values Unit Operating temperature Storage temperature Thermal resistance, junction - case Thermal resistance, junction - ambient IEC climatic category, DIN IEC 68-1 Tj Tstg RthJC RthJA -55 .
.
.
+ 175 -55 .
.
.
+ 175 °C ≤ 0.
88 ≤ 62 55 / 175 / 56 K/W Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min.
Static Characteristics Values typ.
max.
Unit Drain- source breakdown voltage V GS = 0 V, ID = 0.
25 mA, Tj = 25 °C V (BR)DSS V 55 - Gate threshold voltage V GS=V DS, ID = 130 µA V GS(th) 2.
1 IDSS 3 4 µA Zero gate voltage drain current V DS = 50 V, V GS = 0 V, Tj = -40 °C V DS = 50 V, V GS = 0 V, Tj = 25 °C V DS = 50 V, V GS = 0 V, Tj = 150 °C IGSS 0.
1 - 0.
1 1 100 nA Gate-source leakage current V GS = 20 V, VDS = 0 V RDS(on) 10 100 Drain-Source on-resistance V GS = 10 V, ID = 55 A Ω 0.
01 0.
015 Semiconductor Group 2 30/Jan/1998 BUZ 100 S SPP77N05 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min.
Values typ.
max.
Unit Dynamic Characteristics Transconductance V DS≥ 2 * ID...


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