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BUZ100

Siemens Semiconductor Group
Part Number BUZ100
Manufacturer Siemens Semiconductor Group
Description Power Transistor
Published Mar 23, 2005
Detailed Description BUZ 100 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv/dt rated • Ultra low on-resista...
Datasheet PDF File BUZ100 PDF File

BUZ100
BUZ100

Overview
BUZ 100 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv/dt rated • Ultra low on-resistance • 175°C operating temperature • also in TO-220 SMD available Pin 1 G Type BUZ 100 Pin 2 D Pin 3 S VDS 50 V ID 60 A RDS(on) 0.
018 Ω Package TO-220 AB Ordering Code C67078-S1348-A2 Maximum Ratings Parameter Continuous drain current Symbol Values 60 Unit A ID IDpuls 240 TC = 101 °C Pulsed drain current TC = 25 °C Avalanche energy, single pulse EAS 250 dv/dt 6 mJ ID = 60 A, VDD = 25 V, RGS = 25 Ω L = 70 µH, Tj = 25 °C Reverse diode dv/dt kV/µs IS = 60 A, VDS = 40 V, diF/dt = 200 A/µs Tjmax = 175 °C Gate source voltage Power dissipation VGS Ptot ± 20 250 V W TC = 25 °C Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Tj Tstg RthJC RthJA -55 .
.
.
+ 175 -55 .
.
.
+ 175 ≤ 0.
6 ≤ 75 E 55 / 175 / 56 °C K/W Semiconductor Group 1 07/96 BUZ 100 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min.
Static Characteristics Drain- source breakdown voltage Values typ.
max.
Unit V(BR)DSS 50 3 0.
1 1 10 10 0.
013 4 1 100 100 100 V VGS = 0 V, ID = 0.
25 mA, Tj = -40 °C Gate threshold voltage VGS(th) 2.
1 VGS=VDS, ID = 1 mA Zero gate voltage drain current IDSS µA nA µA nA Ω 0.
018 VDS = 50 V, VGS = 0 V, Tj = 25 °C VDS = 50 V, VGS = 0 V, Tj = -40 °C VDS = 50 V, VGS = 0 V, Tj = 150 °C Gate-source leakage current IGSS RDS(on) VGS = 20 V, VDS = 0 V Drain-Source on-resistance VGS = 10 V, ID = 60 A Semiconductor Group 2 07/96 BUZ 100 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min.
Dynamic Characteristics Transconductance Values typ.
max.
Unit gfs 25 39 2400 800 300 - S pF 3200 1200 450 ns 40 60 VDS≥ 2 * ID * RDS(on)max, ID = 60 A Input capacitance Ciss Coss - VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance VGS = 0 V, VDS = 25 ...


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