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BUZ10

Siemens Semiconductor Group
Part Number BUZ10
Manufacturer Siemens Semiconductor Group
Description Power Transistor
Published Mar 23, 2005
Detailed Description BUZ 10 Not for new design SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 D...
Datasheet PDF File BUZ10 PDF File

BUZ10
BUZ10

Overview
BUZ 10 Not for new design SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 10 VDS 50 V ID 23 A RDS(on) 0.
07 Ω Package TO-220 AB Ordering Code C67078-S1300-A2 Maximum Ratings Parameter Continuous drain current Symbol Values 23 Unit A ID IDpuls 92 TC = 26 °C Pulsed drain current TC = 25 °C Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse IAR EAR EAS 23 1.
3 mJ ID = 23 A, VDD = 25 V, RGS = 25 Ω L = 15.
1 µH, Tj = 25 °C Gate source voltage Power dissipation 8 VGS Ptot ± 20 75 V W TC = 25 °C Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Semiconductor Group Tj Tstg RthJC RthJA -55 .
.
.
+ 150 -55 .
.
.
+ 150 ≤ 1.
67 ≤ 75 E 55 / 150 / 56 °C K/W 1 07/96 BUZ 10 Not for new design Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min.
Static Characteristics Drain- source breakdown voltage Values typ.
max.
Unit V(BR)DSS 50 3 0.
1 10 10 0.
05 4 V VGS = 0 V, ID = 0.
25 mA, Tj = 25 °C Gate threshold voltage VGS(th) 2.
1 VGS=VDS, ID = 1 mA Zero gate voltage drain current IDSS 1 100 µA VDS = 50 V, VGS = 0 V, Tj = 25 °C VDS = 50 V, VGS = 0 V, Tj = 125 °C Gate-source leakage current IGSS 100 nA Ω 0.
07 VGS = 20 V, VDS = 0 V Drain-Source on-resistance RDS(on) VGS = 10 V, ID = 14 A Semiconductor Group 2 07/96 BUZ 10 Not for new design Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min.
Dynamic Characteristics Transconductance Values typ.
max.
Unit gfs 7 13 650 300 110 - S pF 820 450 170 ns 20 35 VDS≥ 2 * ID * RDS(on)max, ID = 14 A Input capacitance Ciss Coss - VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance Crss - VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on de...


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