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BUZ100L

Siemens Semiconductor Group
Part Number BUZ100L
Manufacturer Siemens Semiconductor Group
Description Power Transistor
Published Mar 23, 2005
Detailed Description BUZ 100L SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level • dv/dt rated • Ultra...
Datasheet PDF File BUZ100L PDF File

BUZ100L
BUZ100L

Overview
BUZ 100L SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level • dv/dt rated • Ultra low on-resistance • 175 °C operating temperature • also in TO-220 SMD available Pin 1 G Pin 2 D Pin 3 S Type BUZ 100L VDS 50 V ID 60 A RDS(on) 0.
018 Ω Package TO-220 AB Ordering Code C67078-S1354-A2 Maximum Ratings Parameter Continuous drain current Symbol Values 60 Unit A ID IDpuls 240 TC = 101 °C Pulsed drain current TC = 25 °C Avalanche energy, single pulse EAS 250 dv/dt 6 mJ ID = 60 A, VDD = 25 V, RGS = 25 Ω L = 70 µH, Tj = 25 °C Reverse diode dv/dt kV/µs IS = 60 A, VDS = 40 V, diF/dt = 200 A/µs Tjmax = 175 °C Gate source voltage Gate-source peak voltage,aperiodic Power dissipation VGS Vgs Ptot ± 14 ± 20 V W TC = 25 °C 250 Semiconductor Group 1 07/96 BUZ 100L Maximum Ratings Parameter Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Symbol Values -55 .
.
.
+ 175 -55 .
.
.
+ 175 ≤ 0.
6 ≤ 75 E 55 / 175 / 56 K/W Unit °C Tj Tstg RthJC RthJA Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min.
Static Characteristics Drain- source breakdown voltage Values typ.
max.
Unit V(BR)DSS 50 1.
6 0.
1 1 10 10 0.
014 2 1 100 100 100 V VGS = 0 V, ID = 0.
25 mA, Tj = -40 °C Gate threshold voltage VGS(th) 1.
2 VGS=VDS, ID = 1 mA Zero gate voltage drain current IDSS µA nA µA nA Ω 0.
018 VDS = 50 V, VGS = 0 V, Tj = 25 °C VDS = 50 V, VGS = 0 V, Tj = -40 °C VDS = 50 V, VGS = 0 V, Tj = 150 °C Gate-source leakage current IGSS RDS(on) VGS = 20 V, VDS = 0 V Drain-Source on-resistance VGS = 5 V, ID = 30 A Semiconductor Group 2 07/96 BUZ 100L Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min.
Dynamic Characteristics Transconductance Values typ.
max.
Unit gfs 25 45 2800 830 350 - S pF 3750 1250 525 ns 45 70 VDS≥ 2 * ID * RDS(on)max, ID = ...


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