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BUZ171

Part Number BUZ171
Manufacturer Siemens Semiconductor Group
Description Power Transistor
Published Mar 23, 2005
Detailed Description BUZ 171 SIPMOS ® Power Transistor • P channel • Enhancement mode • Avalanche rated Pin 1 G Pin 2 D Pin 3 S Type BU...
Datasheet BUZ171




Overview
BUZ 171 SIPMOS ® Power Transistor • P channel • Enhancement mode • Avalanche rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 171 VDS -50 V ID -8 A RDS(on) 0.
3 Ω Package TO-220 AB Ordering Code C67078-S1450-A2 Maximum Ratings Parameter Continuous drain current Symbol Values -8 Unit A ID IDpuls -32 TC = 30 °C Pulsed drain current TC = 25 °C Avalanche energy, single pulse EAS 70 mJ ID = -8 A, VDD = -25 V, RGS = 25 Ω L = 1.
1 mH, Tj = 25 °C Gate source voltage Power dissipation VGS Ptot ± 20 40 V W TC = 25 °C Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1...






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