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BUZ173

Part Number BUZ173
Manufacturer Siemens Semiconductor Group
Description Power Transistor
Published Mar 23, 2005
Detailed Description BUZ 173 SIPMOS ® Power Transistor • P channel • Enhancement mode • Avalanche rated Pin 1 G Pin 2 D Pin 3 S Type BU...
Datasheet BUZ173




Overview
BUZ 173 SIPMOS ® Power Transistor • P channel • Enhancement mode • Avalanche rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 173 VDS -200 V ID -3.
6 A RDS(on) 1.
5 Ω Package TO-220 AB Ordering Code C67078-S1452-A2 Maximum Ratings Parameter Continuous drain current Symbol Values -3.
6 Unit A ID IDpuls -14 TC = 30 °C Pulsed drain current TC = 25 °C Avalanche energy, single pulse EAS 200 mJ ID = -3.
6 A, VDD = -25 V, RGS = 25 Ω L = 23 mH, Tj = 25 °C Gate source voltage Power dissipation VGS Ptot ± 20 40 V W TC = 25 °C Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN I...






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