BUZ20
Semiconductor
Data Sheet
October 1998
File Number 2254.
1
12A, 100V, 0.
200 Ohm, N-Channel Power MOSFET
Features
• 12A, 100V
[ /Title This is an N-Channel enhancement mode silicon gate power • rDS(ON) = 0.
200Ω (BUZ20 field effect
transistor designed for applications such as • SOA is Power Dissipation Limited ) switching
regulators, switching converters, motor drivers, /Subject relay drivers and drivers for high power bipolar switching • Nanosecond Switching Speeds
transistors requiring high speed and low gate drive power.
(12A, • Linear Transfer Characteristics This type can be operated directly from integrated circuits.
100V, • High Input Impedance 0.
200 Formerly developmental type...