BUZ32
Semiconductor
Data Sheet
October 1998
File Number 2416.
1
9.
5A, 200V, 0.
400 Ohm, N-Channel Power MOSFET
Features
• 9.
5A, 200V
[ /Title This is an N-Channel enhancement mode silicon gate power • rDS(ON) = 0.
400Ω (BUZ32) field effect
transistor designed for applications such as • SOA is Power Dissipation Limited /Subject switching
regulators, switching converters, motor drivers, • Nanosecond Switching Speeds (9.
5A, relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
200V, • Linear Transfer Characteristics This type can be operated directly from integrated circuits.
0.
400 • High Input Impedance Ohm, N- Formerly develop...