Philips Semiconductors
Product specification
N-channel enhancement mode MOS
transistor
FEATURES
• Very low threshold voltage • Fast switching • Logic level compatible • Subminiature surface mount package
BSH106
SYMBOL
d
QUICK REFERENCE DATA
VDS = 20 V ID = 1.
05 A
g
RDS(ON) ≤ 250 mΩ (VGS = 2.
5 V) VGS(TO) ≥ 0.
4 V
s
GENERAL DESCRIPTION
N-channel, enhancement mode, logic level, field-effect power
transistor.
This device has very low threshold voltage and extremely fast switching making it ideal for battery powered applications and high speed digital interfacing.
The BSH106 is supplied in the SOT363 subminiature surface mounting package.
PINNING
PIN 1,2,5,6 drain 3 4 gate source DESCRIPTI...