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BSH108

NXP
Part Number BSH108
Manufacturer NXP
Description N-channel enhancement mode field-effect transistor
Published Mar 23, 2005
Detailed Description BSH108 N-channel enhancement mode field-effect transistor Rev. 02 — 25 October 2000 M3D088 Product specification 1. Desc...
Datasheet PDF File BSH108 PDF File

BSH108
BSH108

Overview
BSH108 N-channel enhancement mode field-effect transistor Rev.
02 — 25 October 2000 M3D088 Product specification 1.
Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology.
Product availability: BSH108 in SOT23.
2.
Features s s s s TrenchMOS™ technology Very fast switching Logic level compatible Subminiature surface mount package.
3.
Applications s Battery management s High speed switch s Low power DC to DC converter.
c c 4.
Pinning information Table 1: Pin 1 2 3 Pinning - SOT23, simplified outline and symbol Description gate (g) 3 Simplified outline Symbol source (s) drain (d) g 1 Top view 2 MSB003 MBB076 d s SOT23 1.
TrenchMOS is a trademark of Royal Philips Electronics.
Philips Semiconductors BSH108 N-channel enhancement mode field-effect transistor 5.
Quick reference data Table 2: VDS ID Ptot Tj RDSon Quick reference data Conditions Tj = 25 to 150 °C Tsp = 25 °C; VGS = 5 V Tsp = 25 °C VGS = 10 V; ID = 1 A VGS = 5 V...


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