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BSH107

NXP
Part Number BSH107
Manufacturer NXP
Description N-channel enhancement mode MOS transistor
Published Mar 23, 2005
Detailed Description Philips Semiconductors Product specification N-channel enhancement mode MOS transistor FEATURES • Very low threshold v...
Datasheet PDF File BSH107 PDF File

BSH107
BSH107

Overview
Philips Semiconductors Product specification N-channel enhancement mode MOS transistor FEATURES • Very low threshold voltage • Fast switching • Logic level compatible • Subminiature surface mount package BSH107 SYMBOL d QUICK REFERENCE DATA VDS = 20 V ID = 1.
75 A g RDS(ON) ≤ 90 mΩ (VGS = 2.
5 V) VGS(TO) ≥ 0.
4 V s GENERAL DESCRIPTION N-channel, enhancement mode, logic level, field-effect power transistor.
This device has very low threshold voltage and extremely fast switching making it ideal for battery powered applications and high speed digital interfacing.
The BSH107 is supplied in the SOT457 subminiature surface mounting package.
PINNING PIN 1,2,5,6 drain 3 4 gate source DESCRIPTION SOT457 6 5 4 Top view 1 2 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL VDS VDGR VGS ID IDM Ptot Tstg, Tj PARAMETER Drain-source voltage Drain-gate voltage Gate-source voltage Drain current (DC) Drain current (pulse peak value) Total power d...


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