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BSH101

NXP
Part Number BSH101
Manufacturer NXP
Description N-channel enhancement mode MOS transistor
Published Mar 23, 2005
Detailed Description DISCRETE SEMICONDUCTORS DATA SHEET andbook, halfpage M3D088 BSH101 N-channel enhancement mode MOS transistor Product ...
Datasheet PDF File BSH101 PDF File

BSH101
BSH101

Overview
DISCRETE SEMICONDUCTORS DATA SHEET andbook, halfpage M3D088 BSH101 N-channel enhancement mode MOS transistor Product speciÞcation Supersedes data of 1997 Nov 28 File under Discrete Semiconductors, SC13b 2000 Jul 19 Philips Semiconductors Product specification N-channel enhancement mode MOS transistor FEATURES • Very low threshold • High-speed switching • No secondary breakdown • Direct interface to C-MOS, TTL etc.
APPLICATIONS • Power management • DC to DC converters • Battery powered applications • 'Glue-logic'; interface between logic blocks and/or periphery • General purpose switch.
DESCRIPTION N-channel enhancement mode MOS transistor in a SOT23 SMD package.
1 Top view 2 MAM273 BSH101 PINNING - SOT23 PIN 1 2 3 SYMBOL g s d gate source drain DESCRIPTION handbook, halfpage 3 d g s Fig.
1 Simplified outline and symbol.
QUICK REFERENCE DATA SYMBOL VDS VSD VGS VGSth ID RDSon Ptot PARAMETERS drain-source voltage (DC) source-drain diode forward voltage gate-source voltage (DC) gate-source threshold voltage drain current (DC) drain-source on-state resistance total power dissipation VDS = VGS ; ID = 1 mA Ts = 80 °C VGS = 10 V; ID = 0.
35 A Ts = 80 °C CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling.
For further information, refer to Philips specs.
: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
VGD = 0; IS = 0.
5 A CONDITIONS − − − 1 − − − MIN.
1 ±20 − 0.
7 0.
81 0.
5 MAX.
60 V V V V A Ω W UNIT 2000 Jul 19 2 Philips Semiconductors Product specification N-channel enhancement mode MOS transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL VDS VGS ID IDM Ptot PARAMETER drain-source voltage (DC) gate-source voltage (DC) drain current (DC) peak drain current total power dissipation Ts = 80 °C; note 1 note 2 Ts = 80 °C Tamb = 25 °C; note 3 Tamb = 25 °C; note 4 Tstg Tj IS ISM Notes 1.
Ts is the temperature at the soldering point of the drai...


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