BSH112

BSH112 N-channel enhancement mode field-effect transistor Rev. 01 — 25 August 2000 M3D088 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Product availability: BSH112 in SOT23. 2. Features s s s s s TrenchMOS™ technology Very fast switching Logic level compatible Submi...