BSR50
BSR50
NPN Darlington
Transistor
• This device designed for applications requiring extremely high gain at collector currents to 0.
5A.
• Sourced from Process 06.
1
TO-92
1.
Emitter 2.
Collector 3.
Base
NPN Epitaxial Silicon
Transistor
Absolute Maximum Ratings TA=25°C unless otherwise noted
Symbol VCEO VCBO VEBO IC TJ, TSTG Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Storage Temperature Ratings 45 60 5 1.
5 -55 ~ 150 Units V V V A °C
Electrical Characteristics TA=25°C unless otherwise noted
Symbol BVCEO BVCBO BVEBO ICBO IEBO hFE VCE (sat) VBE (sat) Parameter Collector-Emitter Breakdown Voltage * Collector-Base Breakdown Voltage Em...