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BSR13

NXP
Part Number BSR13
Manufacturer NXP
Description NPN switching transistors
Published Mar 23, 2005
Detailed Description DISCRETE SEMICONDUCTORS DATA SHEET halfpage M3D088 BSR13; BSR14 NPN switching transistors Product specification Supers...
Datasheet PDF File BSR13 PDF File

BSR13
BSR13

Overview
DISCRETE SEMICONDUCTORS DATA SHEET halfpage M3D088 BSR13; BSR14 NPN switching transistors Product specification Supersedes data of 1997 Apr 22 1999 Apr 15 Philips Semiconductors Product specification NPN switching transistors FEATURES • High current (max.
800 mA) • Low voltage (max.
40 V).
APPLICATIONS • Switching and linear applications.
DESCRIPTION NPN switching transistor in a SOT23 plastic package.
PNP complements: BSR15 and BSR16.
MARKING TYPE NUMBER BSR13 BSR14 Note 1.
∗ = p : Made in Hong Kong.
∗ = t : Made in Malaysia.
MARKING CODE(1) U7∗ U8∗ Top view handbook, halfpage BSR13; BSR14 PINNING PIN 1 2 3 base emitter collector DESCRIPTION 3 3 1 2 1 2 MAM255 Fig.
1 Simplified outline (SOT23) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL VCBO BSR13 BSR14 VCEO collector-emitter voltage BSR13 BSR14 VEBO emitter-base voltage BSR13 BSR14 IC ICM IBM Ptot Tstg Tj Tamb collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C open collector − − − − − − −65 − −65 5 6 800 800 200 250 +150 150 +150 V V mA mA mA mW °C °C °C open base − − 30 40 V V PARAMETER collector-base voltage CONDITIONS open emitter − − 60 75 V V MIN.
MAX.
UNIT 1999 Apr 15 2 Philips Semiconductors Product specification NPN switching transistors THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1.
Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS Tj = 25 °C unless otherwise specified.
SYMBOL ICBO BSR13 collector cut-off current BSR14 IEBO emitter cut-off current BSR13 BSR14 hFE DC current gain IC = 0.
1 mA; VCE = 10 V; note 1 IC = 1 mA; VCE = 10 V; note 1 IC = 10 mA; VCE = 10 V; note 1 IC = 150 mA; VCE = 10 V; note 1 IC = 150 mA; VCE = 1 V; note 1 DC current gain BSR13 BSR14 VCEsat collector-emitter saturation voltage BSR13 BSR14 collector-emitter saturation voltage BSR13 BSR14 VBEsat base-emitter saturation voltage B...


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