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BSR12

NXP
Part Number BSR12
Manufacturer NXP
Description PNP switching transistor
Published Mar 23, 2005
Detailed Description DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BSR12 PNP switching transistor Product specification 1999 Jul...
Datasheet PDF File BSR12 PDF File

BSR12
BSR12

Overview
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BSR12 PNP switching transistor Product specification 1999 Jul 23 Philips Semiconductors Product specification PNP switching transistor FEATURES • Low current (max.
100 mA) • Low voltage (max.
15 V).
APPLICATIONS • High-speed, saturated switching applications for industrial service in thick and thin-film circuits.
Top view handbook, halfpage BSR12 3 3 1 2 1 2 MAM256 DESCRIPTION PNP switching transistor in a SOT23 plastic package.
PINNING PIN 1 2 3 base emitter collector DESCRIPTION MARKING TYPE NUMBER BSR12 MARKING CODE B5p Fig.
1 Simplified outline (SOT23) and symbol.
QUICK REFERENCE DATA SYMBOL VCBO VCEO ICM Ptot Tj hFE fT toff PARAMETER collector-base voltage collector-emitter voltage peak collector current total power dissipation junction temperature DC current gain transition frequency turn-off time IC = −10 mA; VCE = −1 V IC = −50 mA; VCE = −1 V f = 500 MHz; IC = −50 mA; VCE = −10 V Tamb ≤ 25 °C open emitter open base CONDITIONS − − − − − 30 30 1.
5 MIN.
MAX.
−15 −15 −200 250 150 − 120 − 30 GHz ns V V mA mW °C UNIT ICon = −30 mA; IBon = −3 mA; IBoff = 3mA − 1999 Jul 23 2 Philips Semiconductors Product specification PNP switching transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL VCBO VCEO VEBO IC ICM Ptot Tstg Tj PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current total power dissipation storage temperature junction temperature Tamb ≤ 25 °C CONDITIONS open emitter open base open collector − − − − − − −65 − MIN.
MAX.
−15 −15 −3 −100 −200 250 +150 150 BSR12 UNIT V V V mA mA mW °C °C THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1.
Transistor mounted on a ceramic substrate 8 × 10 × 0.
7 mm.
PARAMETER thermal resistance from junction to ambient note 1 CONDITIONS VALUE 500 UNIT K/W 1999 Jul 23 3 Philips Semiconductors Product specification PNP switching transistor CHARACTERIS...


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