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BSR15

NXP
Part Number BSR15
Manufacturer NXP
Description PNP switching transistors
Published Mar 23, 2005
Detailed Description DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BSR15; BSR16 PNP switching transistors Product specification ...
Datasheet PDF File BSR15 PDF File

BSR15
BSR15

Overview
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BSR15; BSR16 PNP switching transistors Product specification Supersedes data of 1997 May 14 1999 Apr 15 Philips Semiconductors Product specification PNP switching transistors FEATURES • High current (max.
600 mA) • Low voltage (max.
60 V).
APPLICATIONS • Medium power switching.
DESCRIPTION PNP switching transistor in a SOT23 plastic package.
NPN complements: BSR13 and BSR14.
MARKING TYPE NUMBER BSR15 BSR16 Note 1.
∗ = p : Made in Hong Kong.
∗ = t : Made in Malaysia.
MARKING CODE(1) T7∗ T8∗ Top view handbook, halfpage BSR15; BSR16 PINNING PIN 1 2 3 base emitter collector DESCRIPTION 3 3 1 2 1 2 MAM256 Fig.
1 Simplified outline (SOT23) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL VCBO VCEO PARAMETER collector-base voltage collector-emitter voltage BSR15 BSR16 VEBO IC ICM IBM Ptot Tstg Tj Tamb emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C open collector CONDITIONS open emitter open base − − − − − − − −65 − −65 −40 −60 −5 −600 −800 −200 250 +150 150 +150 V V V mA mA mA mW °C °C °C − MIN.
MAX.
−60 V UNIT 1999 Apr 15 2 Philips Semiconductors Product specification PNP switching transistors THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1.
Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS Tj = 25 °C unless otherwise specified.
SYMBOL ICBO BSR15 collector cut-off current BSR16 IEBO hFE emitter cut-off current DC current gain BSR15 BSR16 DC current gain BSR15 BSR16 DC current gain BSR15 BSR16 DC current gain DC current gain BSR15 BSR16 VCEsat VBEsat Cc Ce fT collector-emitter saturation voltage base-emitter saturation voltage collector capacitance emitter capacitance transition frequency IC = −150 mA; IB = −15 mA IC = −500 mA; IB = −50 mA IC = −150 mA; IB = −15 mA IC = −500 mA; IB = −50 mA IE = ie...


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