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BSR16

nexperia
Part Number BSR16
Manufacturer nexperia
Description PNP switching transistor
Published Jul 20, 2019
Detailed Description BSR16 60V, 600 mA, PNP switching transistor 24 April 2015 Product data sheet 1. General description PNP switching tran...
Datasheet PDF File BSR16 PDF File

BSR16
BSR16


Overview
BSR16 60V, 600 mA, PNP switching transistor 24 April 2015 Product data sheet 1.
General description PNP switching transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.
NPN complement: BSR14 2.
Features and benefits • Single general-purpose switching transistor • AEC-Q101 qualified 3.
Applications • Switching and linear amplification 4.
Quick reference data Table 1.
Symbol VCEO IC hFE Quick reference data Parameter collector-emitter voltage collector current DC current gain Conditions open base VCE = -10 V; IC = -150 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.
02; Tamb = 25 °C Min Typ Max Unit - - -60 V -100 - -600 300 mA 5.
Pinning information Table 2.
Pinning information Pin Symbol Description 1 B base 2 E emitter 3 C collector Simplified outline 3 12 TO-236AB (SOT23) Graphic symbol C B E sym132 Nexperia BSR16 60V, 600 mA, PNP switching transistor 6.
Ordering information Table 3.
Ordering information Type number Package Name BSR16 TO-236AB Description plastic surface-mounted package; 3 leads 7.
Marking Table 4.
Marking codes Type number BSR16 Marking code [1] T8% [1] % = placeholder for manufacturing site code Version SOT23 BSR16 Product data sheet All information provided in this document is subject to legal disclaimers.
24 April 2015 © Nexperia B.
V.
2017.
All rights reserved 2 / 14 Nexperia BSR16 60V, 600 mA, PNP switching transistor 8.
Limiting values Table 5.
Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions VCBO collector-base voltage open emitter VCEO collector-emitter voltage open base VEBO emitter-base voltage open collector IC collector current ICM peak collector current single pulse; tp ≤ 1 ms IBM peak base current Ptot total power dissipation Tamb ≤ 25 °C Tj junction temperature Tamb ambient temperature Tstg storage temperature Min Max Unit - -60 V - -60 V - -5 V - -600 mA - -800 mA - -200 mA [1] - 250 mW ...


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