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BSR15

Diotec Semiconductor
Part Number BSR15
Manufacturer Diotec Semiconductor
Description Surface mount Si-Epitaxial PlanarTransistors
Published Mar 23, 2005
Detailed Description BSR 15, BSR 16 PNP Switching Transistors PNP Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransisto...
Datasheet PDF File BSR15 PDF File

BSR15
BSR15

Overview
BSR 15, BSR 16 PNP Switching Transistors PNP Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage Power dissipation – Verlustleistung 2.
9 ±0.
1 0.
4 3 250 mW SOT-23 (TO-236) 0.
01 g 1.
1 Plastic case Kunststoffgehäuse 1.
3 ±0.
1 Type Code 1 2 2.
5 max Weight approx.
– Gewicht ca.
Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle 1.
9 Dimensions / Maße in mm 1=B 2=E 3=C Maximum ratings (TA = 25/C) Collector-Emitter-voltage Collector-Base-voltage Emitter-Base-voltage Power dissipation – Verlustleistung Collector current – Kollektorstrom (dc) Peak Collector current – Kollektor-Spitzenstrom Peak Base current – Basis-Spitzenstrom Junction temp.
– Sperrschichttemperatur Storage temperature – Lagerungstemperatur B open E open C open - VCE0 - VCB0 - VEB0 Ptot - IC - ICM - IBM Tj TS Grenzwerte (TA = 25/C) BSR 15 40 V 60 V 5V 250 mW 1) 600 mA 800 mA 200 mA 150/C - 65…+ 150/C BSR 16 60 V Characteristics (Tj = 25/C) Min.
Collector-Base cutoff current – Kollektorreststrom IE = 0, - VCB = 50 V IE = 0, - VCB = 50 V, Tj = 150/C IE = 0, - VCB = 60 V IE = 0, - VCB = 60 V, Tj = 150/C IC = 0, - VEB = 5 V BSR 15 BSR 16 - ICB0 - ICB0 - ICB0 - ICB0 - IEB0 – – – – – Kennwerte (Tj = 25/C) Typ.
– – – – – Max.
20 nA 20 :A 10 nA 10 :A 50 nA Emitter-Base cutoff current – Emitterreststrom 1 ) Mounted on P.
C.
board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß 01.
11.
2003 8 Switching Transistors Characteristics (Tj = 25/C) Min.
DC current gain – Kollektor-Basis-Stromverhältnis 1) - VCE = 10 V, - IC = 0.
1 mA - VCE = 10 V, - IC = 1 mA - VCE = 10 V, - IC = 10 mA - VCE = 10 V, - IC = 500 mA - VCE = 10 V, - IC = 150 mA - IC = 150 mA, - IB = 15 mA - IC = 500 mA, - IB = 50 mA - IC = 150 mA, - IB = 15 mA - IC = 500 mA, - IB = 50 mA Gain-Bandwidth Product – Transitfrequenz ...


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