BSR56; BSR57; BSR58
N-channel FETs
Rev.
3 — 25 June 2014
Product data sheet
1.
Product profile
1.
1 General description
Symmetrical silicon N-channel depletion type junction field-effect
transistors (FETs) in a plastic microminiature envelope designed for application in thick and thin-film circuits.
The
transistors are intended for low-power, chopper or switching applications in industrial service.
1.
2 Features and benefits
Interchangeable drain and source connections Small package
1.
3 Applications
Low-power, chopper or switching applications Thick and thin-film circuits
1.
4 Quick reference data
Table 1.
Quick reference data
Symbol Parameter
Conditions
VDS
drain-source vol...