DISCRETE SEMICONDUCTORS
DATA SHEET
BF1100; BF1100R Dual-gate MOS-FETs
Product specification File under Discrete Semiconductors, SC07 1995 Apr 25
Philips Semiconductors
Philips Semiconductors
Product specification
Dual-gate MOS-FETs
FEATURES • Specially designed for use at 9 to 12 V supply voltage • Short channel
transistor with high forward transfer admittance to input capacitance ratio • Low noise gain controlled amplifier up to 1 GHz • Superior cross-modulation performance during AGC.
APPLICATIONS • VHF and UHF applications such as television tuners and professional communications equipment.
DESCRIPTION Enhancement type field-effect
transistor in a plastic microminiature SOT143 or SOT1...