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BF1102

NXP
Part Number BF1102
Manufacturer NXP
Description Dual N-channel dual gate MOS-FET
Published Mar 23, 2005
Detailed Description DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage MBD128 BF1102 Dual N-channel dual gate MOS-FET Preliminary specifica...
Datasheet PDF File BF1102 PDF File

BF1102
BF1102

Overview
DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage MBD128 BF1102 Dual N-channel dual gate MOS-FET Preliminary specification 1999 Jul 08 Philips Semiconductors Preliminary specification Dual N-channel dual gate MOS-FET FEATURES • Two low noise gain controlled amplifiers in a single package • Specially designed for 5 V applications • Superior cross-modulation performance during AGC • High forward transfer admittance • High forward transfer admittance to input capacitance ratio.
APPLICATIONS • Gain controlled low noise amplifier for VHF and UHF applications such as television tuners and professional communications equipment.
DESCRIPTION The BF1102 is a combination of two equal dual gate MOS-FETs with shared source and gate 2 leads.
The source and substrate are interconnected.
An internal bias circuit enables DC stabilization and a very good cross-modulation performance at 5 V supply voltage.
Integrated diodes between the gates and source protect against excessive input voltage surges.
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