DISCRETE SEMICONDUCTORS
DATA SHEET
BF1101; BF1101R; BF1101WR N-channel dual-gate MOS-FETs
Product specification Supersedes data of 1999 Feb 01 1999 May 14
Philips Semiconductors
Product specification
N-channel dual-gate MOS-FETs
FEATURES • Short channel
transistor with high forward transfer admittance to input capacitance ratio • Low noise gain controlled amplifier up to 1 GHz • Partly internal self-biasing circuit to ensure good cross-modulation performance during AGC and good DC stabilization.
APPLICATIONS • VHF and UHF applications with 3 to 7 V supply voltage, such as television tuners and professional communications equipment.
handbook, 2 columns 4
BF1101; BF1101R; BF1101WR
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