DISCRETE SEMICONDUCTORS
DATA SHEET
BFG11; BFG11/X
NPN 2 GHz RF power
transistor
Product specification Supersedes data of November 1992 File under Discrete Semiconductors, SC14 1995 Apr 07
Philips Semiconductors
Philips Semiconductors
Product specification
NPN 2 GHz RF power
transistor
FEATURES • High power gain • High efficiency • Small size discrete power amplifier • 1.
9 GHz operating area • Gold metallization ensures excellent reliability.
APPLICATIONS • Common emitter class-AB operation in hand-held radio equipment at 1.
9 GHz.
PINNING PIN BFG11 (see Fig.
1) 1 2 3 4 collector base emitter emitter
1 Top view
BFG11; BFG11/X
DESCRIPTION
NPN silicon planar epitaxial
transistors encapsulate...