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BFG10X

NXP
Part Number BFG10X
Manufacturer NXP
Description UHF power transistor
Published Mar 23, 2005
Detailed Description DISCRETE SEMICONDUCTORS DATA SHEET BFG10W/X UHF power transistor Product specification File under Discrete Semiconducto...
Datasheet PDF File BFG10X PDF File

BFG10X
BFG10X

Overview
DISCRETE SEMICONDUCTORS DATA SHEET BFG10W/X UHF power transistor Product specification File under Discrete Semiconductors, SC14 1995 Sep 22 Philips Semiconductors Product specification UHF power transistor FEATURES • High efficiency • Small size discrete power amplifier • 900 MHz and 1.
9 GHz operating areas • Gold metallization ensures excellent reliability.
APPLICATIONS • Common emitter class-AB operation in hand-held radio equipment up to 1.
9 GHz.
DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in a plastic, 4-pin dual-emitter SOT343 package.
PINNING PIN 1 2 3 4 DESCRIPTION collector emitter base emitter Marking code: T5.
1 BFG10W/X fpage 4 3 2 MBK523 Top view Fig.
1 SOT343.
QUICK REFERENCE DATA RF performance at Tamb = 25 °C in a common-emitter test circuit.
MODE OF OPERATION Pulsed, class-AB, duty cycle: < 1 : 2; tp = 10 ms Pulsed, class-AB, duty cycle: < 1 : 8; tp = 4.
6 ms f (GHz) 1.
9 0.
9 0.
9 LIMITING VALUES In accordance with the Absolute Maximum Rating ...


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