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BFG10W

NXP
Part Number BFG10W
Manufacturer NXP
Description UHF power transistor
Published Mar 23, 2005
Detailed Description DISCRETE SEMICONDUCTORS DATA SHEET BFG10W/X UHF power transistor Product specification File under Discrete Semiconductor...
Datasheet PDF File BFG10W PDF File

BFG10W
BFG10W

Overview
DISCRETE SEMICONDUCTORS DATA SHEET BFG10W/X UHF power transistor Product specification File under Discrete Semiconductors, SC14 1995 Sep 22 Philips Semiconductors UHF power transistor Product specification BFG10W/X FEATURES • High efficiency • Small size discrete power amplifier • 900 MHz and 1.
9 GHz operating areas • Gold metallization ensures excellent reliability.
APPLICATIONS • Common emitter class-AB operation in hand-held radio equipment up to 1.
9 GHz.
DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in a plastic, 4-pin dual-emitter SOT343 package.
PINNING PIN DESCRIPTION 1 collector 2 emitter 3 base 4 emitter fpage 4 3 1 Top view 2 MBK523 Marking code: T5.
Fig.
1 SOT343.
QUICK REFERENCE DATA RF performance at Tamb = 25 °C in a common-emitter test circuit.
MODE OF OPERATION f (GHz) Pulsed, class-AB, duty cycle: < 1 : 2; tp = 10 ms Pulsed, class-AB, duty cycle: < 1 : 8; tp = 4.
6 ms 1.
9 0.
9 0.
9 VCE (V) 3.
6 6 6 PL (mW) 200 650 360 Gp (...


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