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BFG11W

NXP
Part Number BFG11W
Manufacturer NXP
Description NPN 2 GHz power transistor
Published Mar 23, 2005
Detailed Description DISCRETE SEMICONDUCTORS DATA SHEET BFG11W/X NPN 2 GHz power transistor Product specification Supersedes data of Septemb...
Datasheet PDF File BFG11W PDF File

BFG11W
BFG11W

Overview
DISCRETE SEMICONDUCTORS DATA SHEET BFG11W/X NPN 2 GHz power transistor Product specification Supersedes data of September 1995 File under Discrete Semiconductors, SC14 1996 Jun 04 Philips Semiconductors Product specification NPN 2 GHz power transistor FEATURES • High power gain • High efficiency • Small size discrete power amplifier • 1.
9 GHz operating area • Gold metallization ensures excellent reliability • Linear and non-linear operation.
APPLICATIONS • Common emitter class-AB operation in handheld radio equipment at 1.
9 GHz such as DECT, PHS.
• Driver for DCS 1800.
DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in a plastic 4-pin dual-emitter SOT343 package.
Marking code: S4 1 Top view 2 handbook, halfpage BFG11W/X PINNING - SOT343 PIN 1 2 3 4 collector emitter base emitter DESCRIPTION 4 3 MBK523 Fig.
1 Simplified outline.
QUICK REFERENCE DATA RF performance at Ts ≤ 60 °C in a common-emitter test circuit.
MODE OF OPERATION Pulsed, class-AB, δ < 1 : 2; tp =...


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