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BFG11

NXP
Part Number BFG11
Manufacturer NXP
Description NPN 2 GHz RF power transistor
Published Mar 23, 2005
Detailed Description DISCRETE SEMICONDUCTORS DATA SHEET BFG11; BFG11/X NPN 2 GHz RF power transistor Product specification Supersedes data o...
Datasheet PDF File BFG11 PDF File

BFG11
BFG11

Overview
DISCRETE SEMICONDUCTORS DATA SHEET BFG11; BFG11/X NPN 2 GHz RF power transistor Product specification Supersedes data of November 1992 File under Discrete Semiconductors, SC14 1995 Apr 07 Philips Semiconductors Philips Semiconductors Product specification NPN 2 GHz RF power transistor FEATURES • High power gain • High efficiency • Small size discrete power amplifier • 1.
9 GHz operating area • Gold metallization ensures excellent reliability.
APPLICATIONS • Common emitter class-AB operation in hand-held radio equipment at 1.
9 GHz.
PINNING PIN BFG11 (see Fig.
1) 1 2 3 4 collector base emitter emitter 1 Top view BFG11; BFG11/X DESCRIPTION NPN silicon planar epitaxial transistors encapsulated in a plastic, 4-pin dual-emitter SOT143 package.
MARKING TYPE NUMBER BFG11 BFG11/X CODE N72 N73 DESCRIPTION handbook, 2 columns 4 3 2 MSB014 BFG11/X (see Fig.
1) 1 2 3 4 collector emitter base emitter Fig.
1 SOT143.
QUICK REFERENCE DATA RF performance at Tamb = 25 °C in a common-emitter test ci...


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