DISCRETE SEMICONDUCTORS
DATA SHEET
BFG11W/X
NPN 2 GHz power
transistor
Product specification Supersedes data of September 1995 File under Discrete Semiconductors, SC14 1996 Jun 04
Philips Semiconductors
Product specification
NPN 2 GHz power
transistor
FEATURES • High power gain • High efficiency • Small size discrete power amplifier • 1.
9 GHz operating area • Gold metallization ensures excellent reliability • Linear and non-linear operation.
APPLICATIONS • Common emitter class-AB operation in handheld radio equipment at 1.
9 GHz such as DECT, PHS.
• Driver for DCS 1800.
DESCRIPTION
NPN silicon planar epitaxial
transistor encapsulated in a plastic 4-pin dual-emitter SOT343 package.
Marking ...