DISCRETE SEMICONDUCTORS
DATA SHEET
BFG67; BFG67/X; BFG67/XR
NPN 8 GHz wideband
transistors
Product specification Supersedes data of September 1995 1998 Oct 02
Philips Semiconductors
Product specification
NPN 8 GHz wideband
transistors
FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability.
APPLICATIONS Wideband applications in the GHz range, such as satellite TV tuners and portable RF communications equipment.
DESCRIPTION
NPN silicon
transistor in a 4-pin, dual-emitter SOT143B plastic package.
Available with in-line emitter pinning (BFG67) and cross emitter pinning (BFG67/X).
Version with reverse pinning (BFG67/XR) also...