BFP 182
NPN Silicon RF
Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA • fT = 8GHz
F = 1.
2dB at 900MHz
ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BFP 182 RGs Q62702-F1396 1=C 2=E 3=B 4=E
Package SOT-143
Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation Symbol Values 12 20 20 2 35 4 mW 250 150 - 65 .
.
.
+ 150 - 65 .
.
.
+ 150 ≤ 325 °C mA Unit V
VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg
1)
TS ≤ 69 °C
Junction temperature Ambient temperature...