TEMIC
Siliconix
P-Channel Enhancement-Mode
Transistor
Product Summary
V(BR)nSS (V)
-50
rnS(on) (Q) 0.
40
In (A)
-7.
0
TO·220AB
o
DRAIN connected to TAB
S
BUZ171
GDS Top View
D P-Channel MOSFET
Absolute Maximum Ratings (Tc = 25°C Unless Otherwise Noted)
Drain-Source Voltage Gate-Source Voltage
Parameter
Continuous Dram Current
Pulsed Drain Current'
Power Dissipation
Operating Junction and Storage Temperature Range
Lead Temperature (11t6" from case for 10 sec.
)
ITc=25'C ITc = 100'C
LTC = 25'C ITc = 100'e
Symbol VDS VGS
ID
IDM
PD TJ,T,tg
TL
Limit
-50 ±20 -7.
0 -4.
5 -28 40 16 -55 to 150 300
Unit V
A
W
'c
Thermal Resistance Ratings
Parameter Junction-la-Ambient Junction-la-Case ...