BUZ32
N - CHANNEL ENHANCEMENT MODE POWER MOS
TRANSISTOR
TYPE BUZ32
Voss 200 V
Ros(on) 0.
4 0
10 9.
5 A
• 200 VOLTS FOR TELECOMS APPLICATIONS • HIGH CURRENT - FOR PULSED LASER
DRIVES • RATED FOR UNCLAMPED INDUCTIVE
SWITCHING (ENERGY TEST) • • ULTRA FAST SWITCHING • EASY DRIVE - FOR REDUCED COST AND
SIZE
INDUSTRIAL APPLICATIONS: • SWITCHING MODE POWER SUPPLIES • MOTOR CONTROLS FOR ROBOTICS
N - channel enhancement mode POWER MOS field effect
transistor.
Easy drive and very fast switching times make this POWER MOS
transistor ideal for high speed switching applications.
Typical uses include robotcs, laser diode drives, UPS, SMPS, DC/DC, DC switch for telecomms and electric vehicle drives.
,
T...