BUZ60
N - CHANNEL ENHANCEMENT MODE
POWER MOS
TRANSISTOR
TYPE BUZ60
Voss 400 V
Ros(on) 1.
00
10 5.
5 A
• HIGH VOLTAGE - FOR OFF-LINE APPLICATIONS
• ULTRA FAST SWITCHING • EASY DRIVE - FOR REDUCED COST AND
SIZE
INDUSTRIAL APPLICATIONS: • ELECTRONIC LAMP BALLAST • DC SWITCH
N - channel enhancement mode POWER MOS field effect
transistor.
Easy drive and very fast switching times make this POWER MOS
transistor ideal for high speed switching applications.
Applications include DC switch, constant current source, ultrasonic equipment and electronic ballast for fluorescent lamps.
,
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Vos VOGR VGS
10
10M
Ptot Tstg Tj
Drain-source voltage (...