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Part Number
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FDMS86200 |
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Manufacturer
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ON Semiconductor |
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Description
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N-Channel MOSFET |
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Published
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Oct 15, 2019 |
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Detailed Description
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FDMS86200
MOSFET, N‐Channel, Shielded Gate, POWERTRENCH)
150 V, 35 A, 18 mW
General Description This N−Channel MOSFET i...
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Datasheet
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FDMS86200
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Overview
FDMS86200
MOSFET, N‐Channel, Shielded Gate, POWERTRENCH)
150 V, 35 A, 18 mW
General Description This N−Channel MOSFET is produced using ON Semiconductor’s
advanced POWERTRENCH® process that incorporates Shielded Gate technology.
This process has been optimized for the on−state resistance and yet maintain superior switching performance.
Features
• Shielded Gate MOSFET Technology • Max rDS(on) = 18 mW at VGS = 10 V, ID = 9.
6 A • Max rDS(on) = 21 mW at VGS = 6 V, ID = 8.
8 A • Advanced Package and Silicon combination for low rDS(on) and high
efficiency
• MSL1 robust package design • 100% UIL tested • RoHS Compliant
Applications
• DC−DC Conversion
MAXIMUM RATINGS (TA = 25°C unless otherwise not...
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